ICPS2026
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Session Details

01: Material growth, structural properties, and characterization (bulk, nanowires, dots)

[Th-P1-G]Advanced Epitaxy & Related Technology

Thu. Aug 20, 2026 2:00 PM - 3:30 PM JST
Thu. Aug 20, 2026 5:00 AM - 6:30 AM UTC
Room G (Room COMET)(Main Tower 43th floor)
2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[Th-P1-G-01]Machine-Learning enabled acceleration of growth simulations

Daniele Lanzoni3, Andrea Fantasia1, Fabrizio Rovaris1, Roberto Bergamaschini1, Olivier Pierre-Louis2, 〇Francesco Montalenti1 (1. University of Milano Bicocca (Italy), 2. Université Lyon (France), 3. Tech. Univ. Dresden (Germany))
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[Th-P1-G-02]Record Hole Mobility Exceeding 7 × 106 cm2V-1s-1 in Epitaxial Compressively Strained Germanium Quantum Well on Silicon

〇Maksym MYRONOV1, Alex Bogan2, Sergei Studenikin2 (1. The University of Warwick (UK), 2. National Research Council of Canada, 1200 Montreal Rd., Ottawa, Ontario K1A 0R6, Canada (Canada))
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[Th-P1-G-03]Heteroepitaxy of GaAs on Self-Aligned Graphene Domains on Ge by Lateral Overgrowth

〇ZHANGHAO SONG1, Benjamin Ramsay1, Vitaly Babenko1, Hao Yu1, Zeki Semih Pehlivan1, Gunnar Kusch1, Stephan Hofmann1, Louise C Hirst1 (1. University of Cambridge (UK))
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[Th-P1-G-04]In situ Preparation of GaAs(001)/Al2O3 Interfaces by Atomic Layer Deposition: Chemistry, Carrier Recombination and Fermi Level Pinning

〇Nataliya Demarina1, Soraya Karimzadah1, Benjamin Bennemann1, Abdur Rehman Jalil1, Heinrich Hartmann2, Beata Kardynal1, Mihail Ion Lepsa1, Detlev Andreas Gruetzmacher1 (1. Peter Gruenberg Inst., Forschungszentrum Juelich (Germany), 2. Central Inst. of Engineering, Electronics, Analytics, Forschungszentrum Juelich (Germany))
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[Th-P1-G-05]Optimized Nonlinear-Graded InAlAs Metamorphic Buffers on GaAs(001) for Threading Dislocation Suppression

〇Mikhail Chernov1, Alexander Myasoedov1, Sergey Ivanov1 (1. Ioffe Inst. (Russia))
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