[Th-P1-G] Advanced Epitaxy & Related Technology

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[Th-P1-G-04] In situ Preparation of GaAs(001)/Al₂O₃ Interfaces by Atomic Layer Deposition: Chemistry, Carrier Recombination and Fermi Level Pinning

〇Nataliya Demarina¹, Soraya Karimzadah¹, Benjamin Bennemann¹, Abdur Rehman Jalil¹, Heinrich Hartmann², Beata Kardynal¹, Mihail Ion Lepsa¹, Detlev Andreas Gruetzmacher¹ (1. Peter Gruenberg Inst., Forschungszentrum Juelich (Germany), 2. Central Inst. of Engineering, Electronics, Analytics, Forschungszentrum Juelich (Germany))

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