Presentation Information
[Th-P1-G-04]In situ Preparation of GaAs(001)/Al2O3 Interfaces by Atomic Layer Deposition: Chemistry, Carrier Recombination and Fermi Level Pinning
〇Nataliya Demarina1, Soraya Karimzadah1, Benjamin Bennemann1, Abdur Rehman Jalil1, Heinrich Hartmann2, Beata Kardynal1, Mihail Ion Lepsa1, Detlev Andreas Gruetzmacher1 (1. Peter Gruenberg Inst., Forschungszentrum Juelich (Germany), 2. Central Inst. of Engineering, Electronics, Analytics, Forschungszentrum Juelich (Germany))
The X-ray photoelectron spectroscopy and room-temperature photoluminescence (PL) study defines key conditions for effective passivation of (001) GaAs via in situ atomic layer deposition of Al2O3: Al2O3 thickness of at least 3 nm and preferably Al2O3 growth on Ga-terminated surfaces to minimize amount of As-As dimers and elemental As and maximize PL.