[Th-P1-G] Advanced Epitaxy & Related Technology

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[Th-P1-G-05] Optimized Nonlinear-Graded InAlAs Metamorphic Buffers on GaAs(001) for Threading Dislocation Suppression

〇Mikhail Chernov¹, Alexander Myasoedov¹, Sergey Ivanov¹ (1. Ioffe Inst. (Russia))

Threading dislocation density evolution was modeled for 1.3 um-thick In_xAl_1-xAs/GaAs (x_max>0.75) metamorphic buffers with linear, convex, and optimized nonlinear composition grading profiles. The proposed nonlinear-graded profile yielded the lowest TDD (2.9×10⁷ cm^-2) and a favorable relaxation path, consistent with TEM observations.