[Tu-A1-H] Device physics in nitrides

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[Tu-A1-H-01 (Invited)] GaN based devices: charge trapping, reliability physics and perspectives

〇Enrico Zanoni¹, Francesco De Pieri¹, Andrea Carlotto¹, Samrat Roy Chowdhury¹, Manuel Fregolent¹, Isabella Rossetto¹, Carlo De Santi¹, Fabiana Rampazzo¹, Gaudenzio Meneghesso¹, Matteo Meneghini¹ (1. University of Padova (Italy))

Scaling of Gallium Nitride High Electron Mobility Transistors involves an increase of device electric field which may cause trapping effects and hot-electron-induced degradation. This paper will summarize most recent results concerning deep level effects and charge trapping in GaN HEMTs for microwave applications.