[Tu-A1-H] Device physics in nitrides | ICPS2026

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02: Wide-bandgap semiconductors and devices

[Tu-A1-H]Device physics in nitrides

Tue. Aug 18, 2026 9:00 AM - 10:30 AM JST
Tue. Aug 18, 2026 12:00 AM - 1:30 AM UTC

Room H (Room STAR LIGHT)(Main Tower 43th floor)

Chair:Tsunenobu Kimoto(Kyoto Univ.)

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[Tu-A1-H-01]GaN based devices: charge trapping, reliability physics and perspectives

〇Enrico Zanoni¹, Francesco De Pieri¹, Andrea Carlotto¹, Samrat Roy Chowdhury¹, Manuel Fregolent¹, Isabella Rossetto¹, Carlo De Santi¹, Fabiana Rampazzo¹, Gaudenzio Meneghesso¹, Matteo Meneghini¹ (1. University of Padova (Italy))

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[Tu-A1-H-02]Shubnikov-de Haas Oscillations of 2DEG in AlGaN/AlN/GaN and ScAlN/AlGaN/AlN/GaN Heterostructures

〇Yusuke Wakamoto¹, Koei Kubota¹, Tomoya Okuda², Takahiko Kawahara³, Shigeki Yoshida³, Kozo Makiyama³, Ken Nakata³, Atsushi Kobayashi², Takuya Maeda¹ (1. The Univ. of Tokyo (Japan), 2. Tokyo Univ. of Sci. (Japan), 3. Sumitomo Electric Industries Ltd. (Japan))

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[Tu-A1-H-03]Unraveling the Microscopic Configuration and Phonon-Coupled Recombination Dynamics of Oxygen Impurities in AlN

〇Erfei Zhang¹, Mingyi Tan², Tianyu Zhang¹, Lin Shi², Weikun Ge Ge¹, Ning Tang¹, Bo Shen¹ (1. The Univ. of Peking (China), 2. Yancheng Inst. of Technology (China))

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[Tu-A1-H-04]Ultrathin AlN Layers with Atomically Flat Surface for Deep-UV LEDs

〇Shangfeng Liu^1,2, Tongxin Lu^1,3, Ye Yuan³, Jiakang Cao³, Wenting Wan³, Tao Wang¹, Zhaoying Chen¹, Xiaoxiao Sun¹, Xinqiang Wang^1,3 (1. Peking Univ. (China), 2. Great Bay Univ. (China), 3. Songshan Lake Materials Lab. (China))

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[Tu-A1-H-05]Atomically Smooth Surfaces with Linearly Aligned Atomic Steps in AlGaN Grown on Sputtered AlN Template with Reduced Compressive Strain

〇Yuto Matsubara¹, Koki Fujii¹, Yusuke Takayanagi¹, Yukiya Hayashi¹, Soki Shimizu¹, Yuki Kuwahara¹, Soichiro Iseki¹, Kota Matsuo¹, Yuusuke Takashima^1,2, Yoshiki Naoi^1,2, Ibuki Taniuchi³, Shohei Nakamura³, Atsushi Maeoka³, Atsushi Osawa³, Shigeru Takatsuji³, Takahiro Kimura³, Kentaro Nagamatsu^1,2,4 (1. Tokushima University (Japan), 2. pLED, Tokushima University (Japan), 3. SCREEN Holdings Co., Ltd. (Japan), 4. IPHF, Tokushima University (Japan))

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