[Tu-A1-H] Device physics in nitrides

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[Tu-A1-H-02] Shubnikov-de Haas Oscillations of 2DEG in AlGaN/AlN/GaN and ScAlN/AlGaN/AlN/GaN Heterostructures

〇Yusuke Wakamoto¹, Koei Kubota¹, Tomoya Okuda², Takahiko Kawahara³, Shigeki Yoshida³, Kozo Makiyama³, Ken Nakata³, Atsushi Kobayashi², Takuya Maeda¹ (1. The Univ. of Tokyo (Japan), 2. Tokyo Univ. of Sci. (Japan), 3. Sumitomo Electric Industries Ltd. (Japan))

We investigate quantum transport in 2DEGs of sputtered ScAlN/AlGaN/AlN/GaN heterostructures, comparing them to a reference prior to ScAlN regrowth. Shubnikov-de Haas oscillations were clearly observed and analyzed for both structures, from which the quantum relaxation time and effective mass were extracted.