[Tu-A1-H] Device physics in nitrides

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[Tu-A1-H-03] Unraveling the Microscopic Configuration and Phonon-Coupled Recombination Dynamics of Oxygen Impurities in AlN

〇Erfei Zhang¹, Mingyi Tan², Tianyu Zhang¹, Lin Shi², Weikun Ge Ge¹, Ning Tang¹, Bo Shen¹ (1. The Univ. of Peking (China), 2. Yancheng Inst. of Technology (China))

Unintentional O impurities in AlN form deep centers; we identify C_3v (VAl−ON)_a and its LVMs, revealing LVM-mediated electron-phonon coupling for carrier recombination understanding.