[Tu-A1-H] Device physics in nitrides

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[Tu-A1-H-04] Ultrathin AlN Layers with Atomically Flat Surface for Deep-UV LEDs

〇Shangfeng Liu^1,2, Tongxin Lu^1,3, Ye Yuan³, Jiakang Cao³, Wenting Wan³, Tao Wang¹, Zhaoying Chen¹, Xiaoxiao Sun¹, Xinqiang Wang^1,3 (1. Peking Univ. (China), 2. Great Bay Univ. (China), 3. Songshan Lake Materials Lab. (China))

High-quality, 50 nm single-crystalline AlN on sapphire is achieved via physical vapor deposition and high-temperature annealing, uncovering a critical thickness threshold for polycrystalline-to-single-crystalline transformation. This ultrathin template enables DUV-LEDs at 279 nm with 3.95% wall-plug efficiency on a 150 nm AlN buffer.