[Tu-A1-H] Device physics in nitrides

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[Tu-A1-H-05] Atomically Smooth Surfaces with Linearly Aligned Atomic Steps in AlGaN Grown on Sputtered AlN Template with Reduced Compressive Strain

〇Yuto Matsubara¹, Koki Fujii¹, Yusuke Takayanagi¹, Yukiya Hayashi¹, Soki Shimizu¹, Yuki Kuwahara¹, Soichiro Iseki¹, Kota Matsuo¹, Yuusuke Takashima^1,2, Yoshiki Naoi^1,2, Ibuki Taniuchi³, Shohei Nakamura³, Atsushi Maeoka³, Atsushi Osawa³, Shigeru Takatsuji³, Takahiro Kimura³, Kentaro Nagamatsu^1,2,4 (1. Tokushima University (Japan), 2. pLED, Tokushima University (Japan), 3. SCREEN Holdings Co., Ltd. (Japan), 4. IPHF, Tokushima University (Japan))

Atomically smooth surfaces with linearly aligned atomic steps were obtained in Al_0.72Ga_0.28N and Al_0.80Ga_0.20N growth using sputtered AlN template with reduced compressive strain. No hillocks were formed by spiral growth as reported previously. These technology are expected to realize high-performance devices in the future.