[Tu-A2-H] Optical, electrical, and structural properties of oxide semiconductors

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[Tu-A2-H-03] Characterization of Shallow and Deep Level Defects in β-(Al_xGa_1-x)₂O₃ Bulk Crystals

〇Martin Handwerg¹, Deborah Kern¹, Zbigniew Galazka¹, Andreas Fiedler¹ (1. IKZ-Berlin (Germany))

Beta aluminum gallium oxide bulk crystals β-(Al_xGa_1-x)₂O₃ with different aluminum concentrations up to 20% were electrically characterized using temperature dependent Van-der-Pauw-measurements, Hall-measurements, capacitance-voltage-measurements and deep-level transient spectroscopy to investigate shallow and deep level states.