[Tu-A2-H] Optical, electrical, and structural properties of oxide semiconductors | ICPS2026

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Session Details

02: Wide-bandgap semiconductors and devices

[Tu-A2-H]Optical, electrical, and structural properties of oxide semiconductors

Tue. Aug 18, 2026 11:00 AM - 12:30 PM JST
Tue. Aug 18, 2026 2:00 AM - 3:30 AM UTC

Room H (Room STAR LIGHT)(Main Tower 43th floor)

Chair:Masataka Higashiwaki(Osaka Metropolitan Univ.)

11:00 AM - 11:30 AM JST(2:00 AM - 2:30 AM UTC)

[Tu-A2-H-01]Attempts to Realize UV-C Emitters in 180-190 nm Spectral Range using Rocksalt-structured MgZnO Alloy Films and Heterostrutures

〇Takeyoshi Onuma¹, Kotaro Ogawa¹, Hiroyuki Aichi¹, Ryosuke Nemoto¹, Kyohei Tanaka¹, Sanshiro Nakashima¹, Yukino Abe¹, Yuichi Ota², Tomohiro Yamaguchi¹, Tohru Honda¹ (1. Kogakuin University (Japan), 2. Toyama Prefectural University (Japan))

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[Tu-A2-H-02]Polarization- and Time-Resolved 2PE-DFG Spectroscopy of Coherent Exciton Dynamics

〇Nikita V. Siverin¹, Andreas Farenbruch¹, Dmitri R. Yakovlev¹, Daniel J. Gillard², Xuerong Xu², Alexander I. Tartakovskii², Manfred Bayer^1,3 (1. Experimentelle Physik 2, TU Dortmund (Germany), 2. School of Mathematical and Physical Sciences, University of Sheffield (UK), 3. Research Center FEMS, TU Dortmund (Germany))

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[Tu-A2-H-03]Characterization of Shallow and Deep Level Defects in β-(Al_xGa_1-x)₂O₃ Bulk Crystals

〇Martin Handwerg¹, Deborah Kern¹, Zbigniew Galazka¹, Andreas Fiedler¹ (1. IKZ-Berlin (Germany))

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[Tu-A2-H-04]Effects of High-Temperature Post-Deposition Annealing on Trap States in Ga₂O₃ Thin Films Analyzed by DLOS and SSPC

〇Jun Jason Morihara¹, Romualdo Alejandro Ferreyra¹, Tsukasa Kakio¹, Junya Yoshinaga^2,3, Takafumi Kamimura⁴, Yoshinao Kumagai², Masataka Higashiwaki^1,4 (1. Osaka Metropolitan University (Japan), 2. Tokyo University of Agriculture and Technology (Japan), 3. TAIYO NIPPON SANSO CORPORATION (Japan), 4. National Institute of Information and Communications Technology (Japan))

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[Tu-A2-H-05]β-(Al_xGa_1-x)₂O₃/β-Ga₂O₃ Heterostructure Grown on β-(Al_yGa_1-y)₂O₃ Substrates by MOVPE for Power Electronic Applications

〇Saud Bin Anooz¹, Arub Akhtar¹, Ta-Shun Chou¹, Han-Hsu Chen¹, Lukas Paul Schewe², Martin Handwerg¹, Deborah Kern¹, Zbigniew Galazka¹, Martin Schmidbauer¹, Thilo Remmele¹, Martin Albrecht¹, Andreas Fiedler¹, Jan Ingo Flege², Andreas Popp¹ (1. Leibniz-Institut für Kristallzüchtung (IKZ) (Germany), 2. Brandenburg University of Technology (Germany))

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