[Tu-A2-H] Optical, electrical, and structural properties of oxide semiconductors

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[Tu-A2-H-04] Effects of High-Temperature Post-Deposition Annealing on Trap States in Ga₂O₃ Thin Films Analyzed by DLOS and SSPC

〇Jun Jason Morihara¹, Romualdo Alejandro Ferreyra¹, Tsukasa Kakio¹, Junya Yoshinaga^2,3, Takafumi Kamimura⁴, Yoshinao Kumagai², Masataka Higashiwaki^1,4 (1. Osaka Metropolitan University (Japan), 2. Tokyo University of Agriculture and Technology (Japan), 3. TAIYO NIPPON SANSO CORPORATION (Japan), 4. National Institute of Information and Communications Technology (Japan))

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