[Tu-A2-H] Optical, electrical, and structural properties of oxide semiconductors

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[Tu-A2-H-04] Effects of High-Temperature Post-Deposition Annealing on Trap States in Ga₂O₃ Thin Films Analyzed by DLOS and SSPC

〇Jun Jason Morihara¹, Romualdo Alejandro Ferreyra¹, Tsukasa Kakio¹, Junya Yoshinaga^2,3, Takafumi Kamimura⁴, Yoshinao Kumagai², Masataka Higashiwaki^1,4 (1. Osaka Metropolitan University (Japan), 2. Tokyo University of Agriculture and Technology (Japan), 3. TAIYO NIPPON SANSO CORPORATION (Japan), 4. National Institute of Information and Communications Technology (Japan))

In this study, DLOS and SSPC characterization was performed to investigate the effect of high-temperature post-deposition annealing (PDA) on trap generation in n-Ga₂O₃ thin films. We found out that the PDA newly formed deep traps at a level of E_c - 2.8 eV with a density on the order of 10¹⁵ cm^-3.