Presentation Information
[Tu-P-04]Selective Hydrogen Adsorption Drives A/B Step Asymmetry on GaN Vicinal Surfaces in OMVPE
〇Erqi Xu1, Jiale Wang1, Dongwei Xu2, Pawel Kempisty3, Ji Chen4, Bo Shen1, Guangxu Ju1 (1. State Key Lab. of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking Univ. (China), 2. School of Energy and Power Eng., Huazhong Univ. of Sci. and Tech. (China), 3. Inst. of High Pressure Physics, Polish Academy of Sci. (Poland), 4. Interdisciplinary Inst. of Light-Element Quantum Materials and Res. Center for Light-Element Advanced Materials, School of Physics, Peking Univ. (China))
This work establishes a comprehensive mechanistic understanding of the atomic step-dependent hydrogen etching dynamics of GaN (0001) vicinal surfaces with A/B steps during OMVPE, providing atomistic insights into the selective adsorption for hydrogen adatoms at the step edge by first-principles calculations.