[Tu-P] Material growth, structural properties, and characterization (bulk, nanowires, dots) | ICPS2026

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01: Material growth, structural properties, and characterization (bulk, nanowires, dots)

[Tu-P]Material growth, structural properties, and characterization (bulk, nanowires, dots)

Tue. Aug 18, 2026 5:45 PM - 7:30 PM JST
Tue. Aug 18, 2026 8:45 AM - 10:30 AM UTC

Kogakuin Univ. (Poster C1)(Poster)

[Tu-P-01]Thin Film Formation of InP Quantum Dots with a Double-Shell Structure Using Electrostatic-Spraying Deposition Method

Ryotaro Noguchi¹, Koshi Nishiguchi¹, 〇Naoki Ohtani Ohtani¹ (1. Doshisha University (Japan))

[Tu-P-02]Telecom wavelengths InP-based photonic structures for quantum communication

〇Mohamed Benyoucef¹ (1. University of Kassel (Germany))

[Tu-P-03]Monitoring and Improvement of AlAs Quality for MBE Growth - a Crucial Step to Achieve Near-Transform-Limited Quantum Dots Emitting in the Telecom O-Band

〇Severin Krüger^1,2, Elias Kersting¹, Phil Julien Badura¹, Marcus Albrechtsen³, Leonardo Midolo³, Arne Ludwig¹ (1. Ruhr-Univ. Bochum (Germany), 2. Sparrow Quantum ApS. (Denmark), 3. Univ. of Copenhagen (Denmark))

[Tu-P-04]Selective Hydrogen Adsorption Drives A/B Step Asymmetry on GaN Vicinal Surfaces in OMVPE

〇Erqi Xu¹, Jiale Wang¹, Dongwei Xu², Pawel Kempisty³, Ji Chen⁴, Bo Shen¹, Guangxu Ju¹ (1. State Key Lab. of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking Univ., Beijing 100871, P.R.China (China), 2. School of Energy and Power Eng., Huazhong Univ. of Sci. and Tech., Wuhan, Hubei 430074, China (China), 3. Inst. of High Pressure Physics, Polish Academy of Sci., Sokolowska 29/37, 01-142 Warsaw, Poland (Poland), 4. Interdisciplinary Inst. of Light-Element Quantum Materials and Res. Center for Light- Element Advanced Materials, School of Physics, Peking Univ., Beijing 100871, P. R.China (China))

[Tu-P-06]RF-MBE Growth and Characterization of InAlN Thermoelectric Thin Films over Whole In Content Range

〇Yuma Sakai¹, Tsutomu Araki², Momoko Deura¹ (1. Waseda Univ. (Japan), 2. Ritsumeikan Univ. (Japan))

[Tu-P-07]In Situ Synchrotron X-ray Studies of (In)GaN Growth Dynamics during OMVPE

〇Guangxu Ju¹, Erqi Xu¹, Dongwei Xu², Matthew Highland³, Peter Zapol³, Bo Shen¹, Brian Stephenson³ (1. Peking University (China), 2. Huazhong University of Science and Technology (China), 3. Argonne National Laboratory (USA))

[Tu-P-08]Room temperature polariton lasing in GaN triangular cavity grown by metal organic chemical vapor deposition

〇Chanyoung Sung¹, Hyungyu Song², Yonghoon Cho¹ (1. KAIST (Korea), 2. KIST (Korea))

[Tu-P-09]Structural and Optical Characterization of HVPE-Grown GaN on Polycrystalline AlN with a Sputtered AlN Buffer

〇Anna Honda¹, Eunmin Kwon², Kyoung Hwa Kim², Jun-Seok Park³, Jae Hak Lee⁴, Takeshi Kato¹, Yoshio Honda¹, Hyung Soo Ahn² (1. Nagoya Univ. (Japan), 2. National Korea Maritime and Ocean Univ. (Korea), 3. Kookmin Univ. (Korea), 4. LNBS Co., Ltd. (Korea))

[Tu-P-10]Strain Relaxation, Crystal Tilt and Threading Dislocations in Relaxed Si₁_-xGe_x Buffers on Silicon for the cs-GoS Quantum Materials Platform

Behzad Jazizadeh¹, Parinaz Tabrizian¹, 〇Maksym Myronov¹ (1. University of Warwick (UK))

[Tu-P-11]Growth of hexagonal Silicon Germanium quantum rings

〇Marvin Marco Jansen-Zilles¹, Mette F. Schouten¹, Denny Lamon¹, Marcel A. Verheijen², Erik P.A.M. Bakkers¹ (1. Department of Applied Physics, Eindhoven University of Technology, Groene Loper 19, 5612AP Eindhoven (Netherlands), 2. Eurofins Materials Science BV, High Tech Campus 11, 5656 AE Eindhoven (Netherlands))

[Tu-P-12]Strain-Relaxation Driven Crack Evolution in Si_1-xGe_x/Ge/Si (001) Virtual Substrates Heterostructures

〇Sabur Ayinde¹, Maksym Myronov¹ (1. University of Warwick (UK))

[Tu-P-13]First-principles Study on Mechanical Stability and Electronic Properties of Σ5 Silicon Grain Boundaries

〇Sarah Auliyaurrohman Setiawati Sukoco¹, Wardah Amalia², Naoya Yamaguchi³, Hana Pratiwi Kadarisman³, Fumiyuki Ishii³ (1. Kanazawa Univ. (Japan), 2. Sriwijaya Univ. (Indonesia), 3. NanoMaRi Res. Inst. Kanazawa Univ. (Japan))

[Tu-P-14]In-Situ Helium Plasma Integrated ALD for Screening Effect Relaxation and Performance Enhancement in a-IGZO TFTs

〇Suhwan Hwang^1,2, Youn Sang Kim^1,3 (1. Seoul National Univ. (Korea), 2. Samsung Electronics Co., Ltd (Korea), 3. Advanced Inst. of Convergence Tech. (Korea))

[Tu-P-15]Full-Wafer Analysis for Optimizing Quantum Dot Growth

〇Elias Kersting¹, Severin Krüger^1,2, Hans-Georg Babin¹, Nikolai Spitzer¹, Andreas D. Wieck¹, Arne Ludwig¹ (1. Ruhr-Univ. Bochum (Germany), 2. Sparrow Quantum ApS (Denmark))

[Tu-P-16]First-Principles Study of Carrier Capture at Radiation-Induced Defects in Silicon within the Static Approximation

〇Vladislav Pelenitsyn¹ (1. Dukhov Res. Inst. of Automatics (Russia))

[Tu-P-17]Shear-Induced Phase Transformations in Silicon During Saw Dicing

〇Zainab -^1,2, Jörg Debus¹, Hannes Kurtze² (1. Technical Univ. Dortmund (TUD) (Germany), 2. Anhalt Univ. of Applied Sci. (Germany))

[Tu-P-18]Schottky Barrier Characteristics at the NiAl/p-Si Heterojunctions

〇CHIH-HSING WANG^1,2, Andrea Ruiz-Perona^1,2, Hiroyuki Yamada¹, Thien Duc Ngo¹, Toan Phuoc Tran^1,2, Keisuke Watanabe¹, Tadaaki Nagao^1,2 (1. National Institute for Materials Science (NIMS) (Japan), 2. Hokkaido University (Japan))

[Tu-P-19]Mineral Interface Doping: a Safer Alternative to Doping Silicon Substrates with Phosphorus/Arsenic without Hazardous Chemicals

〇Roman Konoplev-Esgenburg¹ (1. Karlsruhe Institute of Technology, Germany (Germany))

[Tu-P-20]Chemical Shift of Silicon KLL Auger Prameters in Semiconductors: a First Principles Study

〇Jun Yamauchi¹ (1. Keio Univ. (Japan))

[Tu-P-21]Bayesian Analysis of Interfacial Crystal Distortions in Thermally Grown SiO2 and CVD-Deposited SiOX on a (001) Si Substrates via Crystal Truncation Rod Technique

Sekhar Halubai¹, B. Liu¹, Z. X. Ding¹, K. Enomoto¹, T. Kouno², Y. Terasawa², F. Imura³, T. Hashishin¹, E. Magome⁴, I. Hirosawa⁴, M. Mizumaki², 〇Ichiro Akai¹ (1. Kumamoto Univ. (Japan), 2. NIDEK Co., Ltd (Japan), 3. Hundred Semiconductors Inc. (Japan), 4. SAGA-LS (Japan))

[Tu-P-22]Strain Effects on Density-of-States of p-Type Silicone and Germanium

〇Kazunori Matsuda¹, Masashi Yamamoto², Hiroshi Kajiyama³, Nobuya MOri¹ (1. Osaka University, Graduate School of Engineering (Japan), 2. National Institute of Technology, Kagawa (Japan), 3. Tokushima Bunri University (Japan))

[Tu-P-23]Design and analysis of stepped-mesa Sb-based SWIR avalanche photodiodes

Jiaqi Wei², Peng Cao², Matthew Bentley¹, Yidan Hu¹, Hongling Peng², Wanhua Zheng², 〇Qiandong Zhuang¹ (1. lancaster university (UK), 2. Institute of semiconductors (China))

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