Presentation Information
[Tu-P-06]RF-MBE Growth and Characterization of InAlN Thermoelectric Thin Films over Whole In Content Range
〇Yuma Sakai1, Tsutomu Araki2, Momoko Deura1 (1. Waseda Univ. (Japan), 2. Ritsumeikan Univ. (Japan))
We grew flat InAlN thermoelectric films with the single orientation and In content over the entire In content range using RF-MBE. Higher In content suppressed both phase separation and crack formation by Al precursors decrease and growth mode change.