Presentation Information
[Tu-P-07]In Situ Synchrotron X-ray Studies of (In)GaN Growth Dynamics during OMVPE
〇Guangxu Ju1, Erqi Xu1, Dongwei Xu2, Matthew Highland3, Peter Zapol3, Bo Shen1, Brian Stephenson3 (1. Peking University (China), 2. Huazhong University of Science and Technology (China), 3. Argonne National Laboratory (USA))
In situ synchrotron X-ray scattering reveals step-selective incorporation during (In)GaN OMVPE growth. Off-cut geometry controls asymmetric A/B step kinetics, with preferential incorporation at B steps. These results establish step-dependent incorporation as a key mechanism governing alloy composition and uniformity in III-nitride epitaxy.