Presentation Information
[Tu-P-09]Structural and Optical Characterization of HVPE-Grown GaN on Polycrystalline AlN with a Sputtered AlN Buffer
〇Anna Honda1, Eunmin Kwon2, Kyoung Hwa Kim2, Jun-Seok Park3, Jae Hak Lee4, Takeshi Kato1, Yoshio Honda1, Hyung Soo Ahn2 (1. Nagoya Univ. (Japan), 2. National Korea Maritime and Ocean Univ. (Korea), 3. Kookmin Univ. (Korea), 4. LNBS Co., Ltd. (Korea))
We report continuous GaN layers grown on polycrystalline AlN substrates by HVPE using a sputtered AlN buffer layer. Structural and optical analyses suggest interface recrystallization and a chemically sharp GaN/AlN interface, together with defect-related luminescence associated with the polycrystalline template.