[Tu-P] Material growth, structural properties, and characterization (bulk, nanowires, dots)

[Tu-P-10] Strain Relaxation, Crystal Tilt and Threading Dislocations in Relaxed Si_1-xGe_x Buffers on Silicon for the cs-GoS Quantum Materials Platform

Behzad Jazizadeh¹, Parinaz Tabrizian¹, 〇Maksym Myronov¹ (1. University of Warwick (UK))

Strain relaxation, lattice tilt and defect evolution in graded Si_1-xGe_x buffers on silicon are systemically investigated. raising the graded thickness enhances relaxation and suppresses threading dislocations, but increases mosaic tilt and surface roughness, revealing fundamental trade-offs governing the structural quality.