Presentation Information
[Tu-P-12]Strain-Relaxation Driven Crack Evolution in Si1-xGex/Ge/Si (001) Virtual Substrates Heterostructures
〇Sabur Ayinde1, Maksym Myronov1 (1. University of Warwick (UK))
Increasing Si1-xGex/Ge buffer thickness in Si1-xGex/Ge/Si (001) virtual substrates reduce surface roughness and threading dislocation density, while strain-relaxation-induced cracking emerges, highlighting a key trade-off in optimizing heterostructures and providing practical guidance for advanced semiconductor and quantum devices.