Presentation Information
[Tu-P-14]In-Situ Helium Plasma Integrated ALD for Screening Effect Relaxation and Performance Enhancement in a-IGZO TFTs
〇Suhwan Hwang1,2, Youn Sang Kim1,3 (1. Seoul National Univ. (Korea), 2. Samsung Electronics Co., Ltd (Korea), 3. Advanced Inst. of Convergence Tech. (Korea))
In ALD, bulky precursors induce a screening effect. We propose in-situ helium plasma integrated ALD, where He+ bombardment redistributes precursors to inaccessible sites, suppressing screening.