[Tu-P] Material growth, structural properties, and characterization (bulk, nanowires, dots)

[Tu-P-15] Full-Wafer Analysis for Optimizing Quantum Dot Growth

〇Elias Kersting¹, Severin Krüger^1,2, Hans-Georg Babin¹, Nikolai Spitzer¹, Andreas D. Wieck¹, Arne Ludwig¹ (1. Ruhr-Univ. Bochum (Germany), 2. Sparrow Quantum ApS (Denmark))

This work presents a rapid method to optimize molecular beam epitaxy parameters to grow homogeneous, low-density semiconductor quantum dots. Intentional material gradients combined with full-wafer photoluminescence and AFM mapping enable efficient tuning of emitter density and emission wavelength at 780 nm and 1310 nm.