Presentation Information
[Tu-P-16]First-Principles Study of Carrier Capture at Radiation-Induced Defects in Silicon within the Static Approximation
〇Vladislav Pelenitsyn1 (1. Dukhov Res. Inst. of Automatics (Russia))
First-principles calculations of carrier capture cross sections for radiation-induced defects in silicon are presented. The calculations were performed within the static approximation with all phonon modes included. The results support the reliability of this approximation and show reasonable agreement with experimental data.