[Tu-P] Material growth, structural properties, and characterization (bulk, nanowires, dots)

[Tu-P-18] Schottky Barrier Characteristics at the NiAl/p-Si Heterojunctions

〇CHIH-HSING WANG^1,2, Andrea Ruiz-Perona^1,2, Hiroyuki Yamada¹, Thien Duc Ngo¹, Toan Phuoc Tran^1,2, Keisuke Watanabe¹, Tadaaki Nagao^1,2 (1. National Institute for Materials Science (NIMS) (Japan), 2. Hokkaido University (Japan))

High-quality uniaxial NiAl films on p-Si exhibit a sub-eV Schottky barrier (0.72–0.78 eV), corresponding to 1.5–1.7 μm cutoff. Enhanced carrier transport and strong optical FOM (1.5–2.5 μm) enable wavelength-selective NIR–MWIR infrared sensing.