Presentation Information
[Tu-P-18]Schottky Barrier Characteristics at the NiAl/p-Si Heterojunctions
〇CHIH-HSING WANG1,2, Andrea Ruiz-Perona1,2, Hiroyuki Yamada1, Thien Duc Ngo1, Toan Phuoc Tran1,2, Keisuke Watanabe1, Tadaaki Nagao1,2 (1. National Institute for Materials Science (NIMS) (Japan), 2. Hokkaido University (Japan))