Presentation Information
[Tu-P-19]Mineral Interface Doping: a Safer Alternative to Doping Silicon Substrates with Phosphorus/Arsenic without Hazardous Chemicals
〇Roman Konoplev-Esgenburg1 (1. Karlsruhe Institute of Technology, Germany (Germany))
Mineral Interface Doping using ultra-thin mineral films enables phosphorus or arsenic incorporation into silicon forming silicates on the surface that can be removed without hazardous chemicals. Thus, offering a safer and cheaper alternative to conventional doping methods.