[Tu-P] Material growth, structural properties, and characterization (bulk, nanowires, dots)

[Tu-P-20] Chemical Shift of Silicon KLL Auger Prameters in Semiconductors: a First Principles Study

〇Jun Yamauchi¹ (1. Keio Univ. (Japan))

I will report the first-principles calculation using screened core hole pseudopotentials on chemical shifts of Si KLL Auger parameters, which are defined by the combination of XPS binding and Auger electron kinetic energies, in molecules and semiconductors such as Si and SiC.