Presentation Information
[Tu-P-21]Bayesian Analysis of Interfacial Crystal Distortions in Thermally Grown SiO2 and CVD-Deposited SiOX on a (001) Si Substrates via Crystal Truncation Rod Technique
Sekhar Halubai1, B. Liu1, Z. X. Ding1, K. Enomoto1, T. Kouno2, Y. Terasawa2, F. Imura3, T. Hashishin1, E. Magome4, I. Hirosawa4, M. Mizumaki2, 〇Ichiro Akai1 (1. Kumamoto Univ. (Japan), 2. NIDEK Co., Ltd (Japan), 3. Hundred Semiconductors Inc. (Japan), 4. SAGA-LS (Japan))
To quantitatively study interfacial crystal distortions at the silicon-insulating liner interface, we propose a Bayesian methodology via. crystal truncation rod (CTR) technique. This enables the evaluation of lattice distortions and the estimation of the number of distorted layers at the interface.