Presentation Information
[Tu-P-22]Strain Effects on Density-of-States of p-Type Silicone and Germanium
〇Kazunori Matsuda1, Masashi Yamamoto2, Hiroshi Kajiyama3, Nobuya MOri1 (1. Osaka University, Graduate School of Engineering (Japan), 2. National Institute of Technology, Kagawa (Japan), 3. Tokushima Bunri University (Japan))
Negative sign of the piezoresistance coefficient of p-Ge along [100] is a long-standing puzzle. It is shown the strain effects of the effective density-of-states which appear in the hole concentration and the relaxation time, play a significant role in the piesoresistance effects of p-Ge.