Presentation Information
[Tu-P-24]Interpretable distillation of self-driving sputter epitaxy into growth rules for β-Ga2O3
〇Yuki K. Wakabayashi1, Yui Ogawa1, Franz Benedict Romero1, Takuma Otsuka2, Yoshitaka Taniyasu1 (1. Basic Research Laboratories, NTT, Inc. (Japan), 2. Communication Science Laboratories, NTT, Inc. (Japan))
We demonstrate how to convert self-driving sputtering optimization data into interpretable beta-Ga2O3 growth rules. A random-forest surrogate reveals substrate temperature as the dominant lever, broad tolerance to Ar flow, fine O2 tuning, and largely additive parameter effects with only modest T-O2 coupling.