[Tu-P] Wide-bandgap semiconductors and devices | ICPS2026

Session Details

02: Wide-bandgap semiconductors and devices

[Tu-P]Wide-bandgap semiconductors and devices

Tue. Aug 18, 2026 5:45 PM - 7:30 PM JST
Tue. Aug 18, 2026 8:45 AM - 10:30 AM UTC

Kogakuin Univ. (Poster C2)(Poster)

[Tu-P-24]Interpretable distillation of self-driving sputter epitaxy into growth rules for β-Ga₂O₃

〇Yuki K. Wakabayashi¹, Yui Ogawa¹, Franz Benedict Romero¹, Takuma Otsuka², Yoshitaka Taniyasu¹ (1. Basic Research Laboratories, NTT, Inc. (Japan), 2. Communication Science Laboratories, NTT, Inc. (Japan))

[Tu-P-25]Self-driving sputtering epitaxy of β-Ga₂O₃

〇Yuki K. Wakabayashi¹, Yui Ogawa¹, Franz Benedict Romero^1,2, Takuma Otsuka², Yoshitaka Taniyasu¹ (1. Basic Research Laboratories, NTT, Inc. (Japan), 2. Communication Science Laboratories, NTT, Inc. (Japan))

[Tu-P-26]Swift Heavy Ion Induced Radiation Effects in Gallium oxide

〇Lijun Xu¹, Pengfei Zhai¹, Peipei Hu¹, Shengxia Zhang¹, Wensi Ai¹, Jie Liu¹ (1. Institute of Modern Physics, Chinese Academy of Sciences (China))

[Tu-P-27]The Influence of Hole Transport in NiO RESURF Layer on the Switching Characteristics of of Ga₂O₃ Field-Effect Transistors

〇Ruixiang ZHU¹, Pengchen ZHU¹, Wenpeng ZHOU¹, Man Hoi WONG¹ (1. The Hong Kong Univ. of Sci. and Tech. (Hong Kong))

[Tu-P-28]Comparative Study of Laser Annealing and Rapid Thermal Annealing for Ohmic Contacts on Si-Doped β-Ga₂O₃

〇Md Modassir Anwer¹, Prakhar Srivastava², Amit Verma¹ (1. Indian Institute of Technology Kanpur (India), 2. Indian Institute of Technology BHU (India))

[Tu-P-29]LPCVD-Grown Solar-Blind β-Ga2O3 MSM Photodetectors for High Temperature Operation

〇DEEPAK KUMAR¹, AMIT VERMA¹ (1. Indian Institute of Technology Kanpur (India))

[Tu-P-30]Electronic Transport in Amorphous Mictamict Ti-Si-O for Thin-Film Device Applications

Szymon Rzeczkowski¹, Miłosz Bury², Marek Wzorek², Rafał Zybała², Marta Gryglas-Borysiewicz¹, 〇Michał Adam Borysiewicz² (1. Faculty of Physics, University of Warsaw (Poland), 2. Łukasiewicz Research Network - Institute of Microelectronics and Photonics (Poland))

[Tu-P-31]Conductivity Evolution in AZO Thin Films Deposited at Short Target-Substrate Distances

〇Kamila Strycharz¹, Tomasz Wojtowicz², Marcin Klepka³, Anna Wolska³, Zsolt Fogarassy⁴, Rafał Zybała¹, Michał Adam Borysiewicz¹ (1. Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Warsaw, Poland (Poland), 2. International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences (Poland), 3. Institute of Physics, Polish Academy of Sciences (Poland), 4. Institute of Technical Physics and Materials Science, HUN-REN Centre for Energy Research (Hungary))

[Tu-P-32]Theoretical Modelling of the Optical Response of WO3 to Hydrogen Gas

〇Karen Fidanyan¹, Alexey Yanilkin¹ (1. Dukhov Automatics Research Institute (VNIIA) (Russia))

[Tu-P-33]Supression of Wurtzite Structure in Rocksalt-structured MgZnO Films by Mist CVD Using Modified Precursor Supply Method

〇Kyosuke Tanaka¹, Kotaro Ogawa¹, Sanshiro Nakashima¹, Tomohiro Yamaguchi¹, Tohru Honda¹, Takeyoshi Onuma¹ (1. Kogakuin Univ. (Japan))

[Tu-P-34]Anomalous Hopping and Electron Mobility Limitation in Si-doped β-Ga₂O₃ Films Grown on Sapphire by LI-MOCVD

〇Fridrich Egyenes¹, Martin Mosko^1,2, Zeyu Chi³, Andrej Vincze⁴, Kristyna Husekova¹, Edmund Dobrocka¹, Alica Rosova¹, Marian Precner¹, Peter Ondrejka⁵, Ekaterine Chikoidze³, Miroslav Mikolasek⁵, Matej Micusik⁶, Milan Tapajna¹, Filip Gucmann¹ (1. IEE SAS Bratislava (Slovakia), 2. Comenius Univ. Bratislava (Slovakia), 3. The Univ. Paris-Saclay (France), 4. Slovak Cen. of Sci. and Tech. (Slovakia), 5. Slovak Univ. of Tech. Bratislava (Slovakia), 6. PI SAS Bratislava (Slovakia))

[Tu-P-35]Post-Anneal Treatment in Ehhancing the Detectivity of AgNiO/Si Ultraviolet Heterojunction Photodiodes

〇Jun-Dar Hwang¹ (1. National Chiayi University (Taiwan))

[Tu-P-36]Strain Effect on the Valence Band Energy of β-Ga₂O₃

〇Hiroyuki Yaguchi¹, Shuhei Yagi¹ (1. Saitama Univ. (Japan))

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