Presentation Information
[Tu-P-25]Self-driving sputtering epitaxy of β-Ga2O3
〇Yuki K. Wakabayashi1, Yui Ogawa1, Franz Benedict Romero1,2, Takuma Otsuka2, Yoshitaka Taniyasu1 (1. Basic Research Laboratories, NTT, Inc. (Japan), 2. Communication Science Laboratories, NTT, Inc. (Japan))
We demonstrate a self-driving RF magnetron sputtering laboratory that autonomously optimizes β-Ga2O3 epitaxy using Bayesian optimization guided by Urbach energy from optical transmittance. In 59 runs, it finds a narrow window yielding record low Urbach energy of 182 meV and transferable hetero-/homoepitaxial single-crystal growth.