[Tu-P] Wide-bandgap semiconductors and devices

[Tu-P-27] The Influence of Hole Transport in NiO RESURF Layer on the Switching Characteristics of of Ga₂O₃ Field-Effect Transistors

〇Ruixiang ZHU¹, Pengchen ZHU¹, Wenpeng ZHOU¹, Man Hoi WONG¹ (1. The Hong Kong Univ. of Sci. and Tech. (Hong Kong))

NiO RESURF layer can be used for field management in Ga₂O₃ field-effect transistor. Through theoretical analysis and TCAD simulations, we find that faster turn-on can be achieved by increasing NiO hole mobility and by adopting a thicker, more lightly doped NiO RESURF layer.