Presentation Information
[Tu-P-27]The Influence of Hole Transport in NiO RESURF Layer on the Switching Characteristics of of Ga2O3 Field-Effect Transistors
〇Ruixiang ZHU1, Pengchen ZHU1, Wenpeng ZHOU1, Man Hoi WONG1 (1. The Hong Kong Univ. of Sci. and Tech. (Hong Kong))
