Presentation Information

[Tu-P-27]The Influence of Hole Transport in NiO RESURF Layer on the Switching Characteristics of of Ga2O3 Field-Effect Transistors

〇Ruixiang ZHU1, Pengchen ZHU1, Wenpeng ZHOU1, Man Hoi WONG1 (1. The Hong Kong Univ. of Sci. and Tech. (Hong Kong))

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