[Tu-P] Wide-bandgap semiconductors and devices

[Tu-P-28] Comparative Study of Laser Annealing and Rapid Thermal Annealing for Ohmic Contacts on Si-Doped β-Ga₂O₃

〇Md Modassir Anwer¹, Prakhar Srivastava², Amit Verma¹ (1. Indian Institute of Technology Kanpur (India), 2. Indian Institute of Technology BHU (India))

Password required to view