Presentation Information
[Tu-P-28]Comparative Study of Laser Annealing and Rapid Thermal Annealing for Ohmic Contacts on Si-Doped β-Ga2O3
〇Md Modassir Anwer1, Prakhar Srivastava2, Amit Verma1 (1. Indian Institute of Technology Kanpur (India), 2. Indian Institute of Technology BHU (India))
This work presents a comparative study of ohmic contact realization using laser annealing and rapid thermal annealing on Ti/Al contacts deposited on Si-doped β-Ga2O3 films with varying levels of doping, demonstrating laser annealing as a promising spatially selective technique