[Tu-P] Wide-bandgap semiconductors and devices

[Tu-P-29] LPCVD-Grown Solar-Blind β-Ga2O3 MSM Photodetectors for High Temperature Operation

〇DEEPAK KUMAR¹, AMIT VERMA¹ (1. Indian Institute of Technology Kanpur (India))

A solar-blind Metal-Semiconductor-Metal photodetector based on LPCVD-grown β-Ga₂O₃ is demonstrated for harsh-environment operation. Photodetectors fabricated on films grown under optimized conditions and annealed in air exhibit good performance with a photo-to-dark current ratio >300 even at 300 ºC.