[Tu-P] Wide-bandgap semiconductors and devices

[Tu-P-30] Electronic Transport in Amorphous Mictamict Ti-Si-O for Thin-Film Device Applications

Szymon Rzeczkowski¹, Miłosz Bury², Marek Wzorek², Rafał Zybała², Marta Gryglas-Borysiewicz¹, 〇Michał Adam Borysiewicz² (1. Faculty of Physics, University of Warsaw (Poland), 2. Łukasiewicz Research Network - Institute of Microelectronics and Photonics (Poland))

We investigate a new member of the M-Si-O mict-amict alloys: Ti-Si-O as cost-effective, stable wide bandgap oxide TCO films. Sputtered films transition from a degenerate metallic state obeying the Mooij rule to an insulating state, driven by the structural evolution of Ti-rich grains.