[Tu-P] Wide-bandgap semiconductors and devices

[Tu-P-35] Post-Anneal Treatment in Ehhancing the Detectivity of AgNiO/Si Ultraviolet Heterojunction Photodiodes

〇Jun-Dar Hwang¹ (1. National Chiayi University (Taiwan))

Silver (Ag) atoms were doped in NiO to prepare AgNiO films and the p-AgNiO/n-Si HPDs were fabricated by spin-coating method. Post-anneal treatment was employed to enhance the detection performance of p-AgNiO/n-Si HPDs