[Tu-P] Wide-bandgap semiconductors and devices

[Tu-P-36] Strain Effect on the Valence Band Energy of β-Ga₂O₃

〇Hiroyuki Yaguchi¹, Shuhei Yagi¹ (1. Saitama Univ. (Japan))

We have used first-principles calculations to study the band energy shift due to strain in β-Ga₂O₃, which affects anisotropic optical properties. The energy shifts of some of the valence bands can be approximately expressed by linear combinations of strains. It is found that the other valence bands exhibit nonlinear behavior with respect to strain.