[Tu-P] Semiconductors for terahertz and mid infrared | ICPS2026

Session Details

03: Semiconductors for terahertz and mid infrared

[Tu-P]Semiconductors for terahertz and mid infrared

Tue. Aug 18, 2026 5:45 PM - 7:30 PM JST
Tue. Aug 18, 2026 8:45 AM - 10:30 AM UTC

Kogakuin Univ. (Poster C3)(Poster)

[Tu-P-37]MIM Tunneling Transistor Platform: Applications for THz-Range High-Speed Switching

〇Jeong Hee Shin¹, Su Jin Heo², Jae Eun Jang³ (1. Korea Inst. of Ceramic Eng. and Tech. (KICET) (Korea), 2. Univ. of Cambridge (UK), 3. Daegu Gyeongbuk Inst. of Sci. and Tech. (DGIST) (Korea))

[Tu-P-38]Attempt at Electrical Readout of Resonant Polaron States
in a Charge Sensitive Infrared Phototransistor

〇Souichi Nakai¹, Shogo Kaneko¹, Takaki Fukumoto¹, Susumu Komiyama^2,3, Hiroaki Yasuda², Norihiko Sekine², Iwao Hosako², Kenji Ikushima¹ (1. Facluty of Engineering, Tokyo university of agriculture and technology (Japan), 2. National Institute of Information and Communications Technology (Japan), 3. Department of Basic Science, The University of Tokyo (Japan))

[Tu-P-39]Piezoresistive-Mode Operation of MEMS Bolometers Using n-type Modulation-Doped AlGaAs/GaAs Heterostructures

〇Kazuhiro Takahashi^1,2,3, Naomi Nagai³, Atsushi Nakanishi¹, Kazuyuki Kuroyama³, Kazuhiko Hirakawa^2,3, Ya Zhang³ (1. Hamamatsu Photonics K.K. (Japan), 2. Tokyo univ. of Agriculture and Tech. (Japan), 3. Inst. of Indus. Sci., The Univ. of Tokyo (Japan))

[Tu-P-40]Electronic States of Above Barrier Energy in Strained InGaAs/GaAs Multiple Quantum Wells for Terahertz Wave Generation via Difference Frequency Mixing

〇Osamu Kojima¹, Yasuki Nakajima¹, Koudai Aoyama¹, Takashi Kita² (1. Chiba Inst. of Tech. (Japan), 2. Kobe Univ. (Japan))

[Tu-P-41]Cyclotron Resonant Nonlinear Hall Effect in 2D Valley Semiconductors via Skew Scattering

〇Valeriia Ivanova¹, Vadim Kovalev^2,3, Ivan Savenko^1,4 (1. Guangdong Technion — Israel Inst. of Tech., 241 Daxue Road, Shantou, Guangdong, China, 515063 (China), 2. Rzhanov Inst. of Semiconductor Physics, Siberian Branch of the Russian Academy of Sci., Novosibirsk 630090, Russia (Russia), 3. Novosibirsk State Tech. Univ., Novosibirsk 630073, Russia (Russia), 4. Technion – Israel Inst. of Tech., Haifa, 3200003, Israel (Israel))

[Tu-P-42]Impact of Excitation Intensity on THz Bloch Oscillations in a GaAs-Based Superlattice: Possible Collapse of a Wannier–Stark Ladder on the Sub-Picosecond Scale

〇Kou Sato¹, Takeya Unuma¹ (1. Nagaoka Univ. of Tech. (Japan))

[Tu-P-43]Microwave Photoresistance in Weak Localization Regime in Al_xGa_1-xAs:Si 3D Epitaxial Layers

〇Alexandra Galeeva¹, Stanislav Chmyr'¹, Alexey Artamkin¹, Dmitry Dolzhenko¹, Mikhail Chernov², Dmitry Khokhlov^1,3 (1. M.V. Lomonosov Moscow State University (Russia), 2. A.F. Ioffe Physical Technical Institute (Russia), 3. P.N. Lebedev Physical Institute (Russia))

[Tu-P-44]Comparison of Ag Addition and Oxygen Incorporation for p-type Conduction in Mg₂Si Thin Films

〇Kaito Masuda¹, Ryoga Toyama¹, Hiroshi Katsumata^1,2 (1. Graduate School of Sci. and Tech., Meiji Univ. (Japan), 2. School of Sci. and Tech., Meiji Univ. (Japan))

[Tu-P-45]Optical and Electrical Evaluation of Excimer-Light-Induced
Surface Electric Fields in GaAs

〇Haruto Monda¹, Kazuki Ueda¹, Takayuki Hasegawa¹, Hideo Wada¹, Masatoshi Koyama¹, Akihiko Fujii¹, Akihiro Shimizu², Toshihiko Maemoto¹ (1. Osaka Inst. of Tech. (Japan), 2. Semiconductor Related Group, Marketing Management Division, Ushio Inc. (Japan))

Back to Category List

Session Details