[Tu-P] Semiconductors for terahertz and mid infrared

[Tu-P-37] MIM Tunneling Transistor Platform: Applications for THz-Range High-Speed Switching

〇Jeong Hee Shin¹, Su Jin Heo², Jae Eun Jang³ (1. Korea Inst. of Ceramic Eng. and Tech. (KICET) (Korea), 2. Univ. of Cambridge (UK), 3. Daegu Gyeongbuk Inst. of Sci. and Tech. (DGIST) (Korea))

A MIM tunneling transistor platform is demonstrated with gate-controlled DT/FNT transition via a floating electrode and on-chip nano vacuum sealing. Gate leakage of ~10^-13 A, ternary logic, and projected 100 THz cut-off frequency are achieved for beyond-CMOS applications.