[Tu-P] Semiconductors for terahertz and mid infrared

[Tu-P-38] Attempt at Electrical Readout of Resonant Polaron States
in a Charge Sensitive Infrared Phototransistor

〇Souichi Nakai¹, Shogo Kaneko¹, Takaki Fukumoto¹, Susumu Komiyama^2,3, Hiroaki Yasuda², Norihiko Sekine², Iwao Hosako², Kenji Ikushima¹ (1. Facluty of Engineering, Tokyo university of agriculture and technology (Japan), 2. National Institute of Information and Communications Technology (Japan), 3. Department of Basic Science, The University of Tokyo (Japan))

Establishing an electrical detection scheme for resonant polaron states in a solid state platform would open a pathway toward onchip quantum state manipulation and future terahertz devices. Charge sensitive infrared phototransistors, originally developed as infrared detectors, provide a promising route for such detection.