Presentation Information
[Tu-P-39]Piezoresistive-Mode Operation of MEMS Bolometers Using n-type Modulation-Doped AlGaAs/GaAs Heterostructures
〇Kazuhiro Takahashi1,2,3, Naomi Nagai3, Atsushi Nakanishi1, Kazuyuki Kuroyama3, Kazuhiko Hirakawa2,3, Ya Zhang3 (1. Hamamatsu Photonics K.K. (Japan), 2. Tokyo univ. of Agriculture and Tech. (Japan), 3. Inst. of Indus. Sci., The Univ. of Tokyo (Japan))
We developed a new MEMS bolometer using a two-dimensional electron gas and piezoresistive detection. It showed a millivolt-level resonance signal and high voltage sensitivity, indicating good performance comparable to a previously fabricated MEMS bolometer based on a two-dimensional hole gas.