Presentation Information
[Tu-P-40]Electronic States of Above Barrier Energy in Strained InGaAs/GaAs Multiple Quantum Wells for Terahertz Wave Generation via Difference Frequency Mixing
〇Osamu Kojima1, Yasuki Nakajima1, Koudai Aoyama1, Takashi Kita2 (1. Chiba Inst. of Tech. (Japan), 2. Kobe Univ. (Japan))
We investigated electronic states in strained InGaAs/GaAs MQWs. Strain-induced localized states above the barrier were identified via PR and PL spectra. For x=0.05, THz wave generation via difference-frequency mixing was successfully observed by exciting these above-barrier states.