[Tu-P] Semiconductors for terahertz and mid infrared

[Tu-P-44] Comparison of Ag Addition and Oxygen Incorporation for p-type Conduction in Mg₂Si Thin Films

〇Kaito Masuda¹, Ryoga Toyama¹, Hiroshi Katsumata^1,2 (1. Graduate School of Sci. and Tech., Meiji Univ. (Japan), 2. School of Sci. and Tech., Meiji Univ. (Japan))

This study investigates impurity doping approaches to realize p-type Mg₂Si thin films fabricated by RF magnetron sputtering. Oxygen introduction induced p-type conduction, likely due to interstitial oxygen acceptors, as predicted by DFT calculations, while Ag addition increased electron concentration through AgMg phase formation.