[Tu-P1-G] Advanced Nitride Materials

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[Tu-P1-G-03] Synchrotron-based In situ X-ray Study of Indium Incorporation Mechanisms during InGaN Heteroepitaxial Growth by MOVPE

〇Qihui Lin¹, Junlin Wu¹, Erqi Xu¹, Jiale Wang¹, Jiaqing Yue¹, Haixin Qi¹, Zihao Xu¹, Liyi Luo¹, Yunhao Ye¹, Bo Shen¹, Guangxu Ju¹ (1. Peking Univ. (China))

In situ synchrotron X-ray diffraction and Burton–Cabrera–Frank model are used to investigate indium incorporation during MOVPE growth of InGaN. The results reveal that droplet-mediated kinetics controls indium incorporation and explains the non-monotonic dependence of composition on TMIn flux.