[Tu-P1-G] Advanced Nitride Materials | ICPS2026

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Session Details

01: Material growth, structural properties, and characterization (bulk, nanowires, dots)

[Tu-P1-G]Advanced Nitride Materials

Tue. Aug 18, 2026 2:00 PM - 3:30 PM JST
Tue. Aug 18, 2026 5:00 AM - 6:30 AM UTC

Room G (Room COMET)(Main Tower 43th floor)

2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[Tu-P1-G-01]Bottom-up growth of sub-µm sized RGB-emitting InGaN nanoLEDs

〇Lars Samuelson^1,2 (1. Southern University of Science and Technology (China), 2. Lund University (Sweden))

2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)

[Tu-P1-G-02]Remote epitaxy for flexible and stacktronic devices

〇Young Joon Hong¹ (1. Sungkyunkwan Univ. (Korea))

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[Tu-P1-G-03]Synchrotron-based In situ X-ray Study of Indium Incorporation Mechanisms during InGaN Heteroepitaxial Growth by MOVPE

〇Qihui Lin¹, Junlin Wu¹, Erqi Xu¹, Jiale Wang¹, Jiaqing Yue¹, Haixin Qi¹, Zihao Xu¹, Liyi Luo¹, Yunhao Ye¹, Bo Shen¹, Guangxu Ju¹ (1. Peking Univ. (China))

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[Tu-P1-G-04]Bandgap Engineering across Telecom Wavelengths of InN Nanowires by Post-growth Hydrogen Irradiation

〇Francesca Santangeli¹, Muhammad Tahir¹, Pietro Todesco¹, Ernesto Placidi¹, Francesco Filippone², Giorgio Pettinari³, Marco Sbroscia¹, Harikrishnan Gopalakrishnan¹, Akant Sagar Sharma¹, Aldo Amore Bonapasta², Zetian Mi⁴, Antonio Polimeni¹, Songrui Zhao⁵, Marta De Luca¹ (1. Sapienza Univ. of Rome (Italy), 2. CNR - Institute of structure of matter (Italy), 3. CNR - Institute for photonics and nanotechnology (Italy), 4. Univ. of Michigan (USA), 5. McGill Univ. (Canada))

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