[Tu-P2-G] Nanowire Materials

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[Tu-P2-G-01] Programming Axial GaAs-Based Nanowire Heterostructures with Monolayer-Level Precision

Donovan Hilliard^1,2, Tina Tauchnitz^1,2, René Hübner¹, Isaak Vasileiadis³, Georgios Dimitrakopulos³, Philomela Komninou³, Xiaoxiao Sun¹, Stephan Winnerl¹, Manfred Helm^1,2, 〇Emmanouil Dimakis¹ (1. Inst. of Ion Beam Physics and Materials Res., Helmholtz-Zentrum Dresden-Rossendorf (Germany), 2. TUD Dresden Univ. of Tech. (Germany), 3. Department of Physics, Aristotle Univ. of Thessaloniki (Greece))

Deterministic programming of axial GaAs/AlGaAs nanowire heterostructures with monolayer-level precision is achieved via pulsed VLS growth. Sequential group-III and group-V flux pulses control droplet composition, suppress reservoir effects, and faithfully translate designed heterostructures into nanowires with abrupt interfaces.