[Tu-P2-G] Nanowire Materials | ICPS2026

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Session Details

01: Material growth, structural properties, and characterization (bulk, nanowires, dots)

[Tu-P2-G]Nanowire Materials

Tue. Aug 18, 2026 4:00 PM - 5:30 PM JST
Tue. Aug 18, 2026 7:00 AM - 8:30 AM UTC

Room G (Room COMET)(Main Tower 43th floor)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[Tu-P2-G-01]Programming Axial GaAs-Based Nanowire Heterostructures with Monolayer-Level Precision

Donovan Hilliard^1,2, Tina Tauchnitz^1,2, René Hübner¹, Isaak Vasileiadis³, Georgios Dimitrakopulos³, Philomela Komninou³, Xiaoxiao Sun¹, Stephan Winnerl¹, Manfred Helm^1,2, 〇Emmanouil Dimakis¹ (1. Inst. of Ion Beam Physics and Materials Res., Helmholtz-Zentrum Dresden-Rossendorf (Germany), 2. TUD Dresden Univ. of Tech. (Germany), 3. Department of Physics, Aristotle Univ. of Thessaloniki (Greece))

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[Tu-P2-G-02]Optical Properties of Nanowires on Demand: from Bandgap Engineering to Quantum Emitters in Dilute Nitrides

〇Marta De Luca¹, Nadine Denis², Francesca Santangeli¹, Antonio Polimeni¹, Silvia Rubini³, Anna Fontcuberta i Morral⁴, Fumitaro Ishikawa⁵, Akant Sagar Sharma¹ (1. Sapienza University (Italy), 2. University of Basel (Switzerland), 3. CNR- TASC Laboratory (Italy), 4. EPFL (Switzerland), 5. Hokkaido University (Japan))

4:30 PM - 5:00 PM JST(7:30 AM - 8:00 AM UTC)

[Tu-P2-G-03]Direct Bandgap SiGe Quantum Dots Realized in Nanowires

〇Denny Lamon¹, Marvin Marco Jansen¹, Marcel A Verheijen^2,1, Erik P.A.M. Bakkers¹ (1. Eindhoven University of Technology (Netherlands), 2. Eurofins Materials Science (Netherlands))

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[Tu-P2-G-04]Optical Metrology of Semiconductor Nanowires Beyond the Diffraction Limit using High-Throughput Correlated Microscopy

〇Greg Chu¹, Zeinab Tirandaz¹, Ralf Mouthaan², Hoe Tan³, Chennupati Jagadish³, Hannah Joyce¹, Jack Alexander-Webber¹ (1. University of Cambridge (UK), 2. University of Adelaide (Australia), 3. The Australian National University (Australia))

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[Tu-P2-G-05]Thermal Annealing Process of InAs Nanowires in Selective-Area Growth

〇DOMA - HACHIMIYA¹, Yuki - Azuma¹, Keita - Taniyama¹, Katsuhiro - Tomioka¹ (1. The Univ. of Hokkaido and RCIQE (Japan))

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