[Tu-P2-G] Nanowire Materials

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[Tu-P2-G-05] Thermal Annealing Process of InAs Nanowires in Selective-Area Growth

〇DOMA - HACHIMIYA¹, Yuki - Azuma¹, Keita - Taniyama¹, Katsuhiro - Tomioka¹ (1. The Univ. of Hokkaido and RCIQE (Japan))

We characterized thermal annealing mechanism for miniturization of InAs NWs by selective-area growth. Post-growth analisys revealed that the mophological evolution of the NWs was governed by the interplay among As desorption , molten In accumulation , In desorption and recrystallization processes.