[Tu-P2-H] SiC, IGZO, Ga2O3, and diamond

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[Tu-P2-H-01] Unique Interface Fixed Charges in Counter-Doped SiC MOSFETs

〇Kyota Mikami¹, Ryuta Kajiwara¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1. Kyoto Univ. (Japan))

Unique interface fixed charges, which may be common in wide-bandgap MOSFETs, were investigated by characterizing counter-doped SiC MOSFETs. The fixed charge density depends on donor/acceptor impurity profile, resulting in the experimental threshold voltage being different from the theoretical value.