Session Details

[Tu-P2-H]SiC, IGZO, Ga2O3, and diamond

Tue. Aug 18, 2026 4:00 PM - 5:30 PM JST
Tue. Aug 18, 2026 7:00 AM - 8:30 AM UTC
Room H (Room STAR LIGHT)(Main Tower 43th floor)
Chair:Man Hoi Wong(Hong Kong Univ. of Science and Technology)

[Tu-P2-H-01]Unique Interface Fixed Charges in Counter-Doped SiC MOSFETs

〇Kyota Mikami1, Ryuta Kajiwara1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1. Kyoto Univ. (Japan))

[Tu-P2-H-02]High-Performance 3D-Stacked IGZO Vertical-Channel TFTs with Sub-60 nm Scaling and Enhanced Electrostatic Control for BEOL Memory Applications

〇YoungJae - Kim1 (1. Kyung Hee University (Korea))

[Tu-P2-H-03]Ultrathin Gallium Oxide by Conversion of Gallium Selenide for Deep-UV Photonics and High-Field Dielectrics

〇Nathan Cottam1, Kazi Rahman1, Jonathan Bradford1, Samiyah A Alghamdi1, Ben T Dewes1, Mustaqeem Shiffa1, Tin S Cheng1, Sergei V Novikov1, Christopher J Mellor1, Oleg Makarovskiy1, Manuel Mundszinger2, Johannes Biskupek2, Ute Kaiser2,3, David Gonzalez4, Teresa Ben4, James N O'Shea1, Amalia Patane1 (1. School of Physics and Astronomy, University of Nottingham (UK), 2. Central Facility Materials Science Electron Microscopy, Ulm University (Germany), 3. Institute of Quantum Optics, Ulm University (Germany), 4. Research Institute in Electron Microscopy and Materials Universidad de Cadiz (Spain))

[Tu-P2-H-04]High-Performance of ultra wide bandgap Ga2O3 X-Ray Detectors: Promising Materials for the Discrimination of Low-Z Cellulose Structures X-Ray Detectors

〇Thi-Thanh-Huong Vo1, Sunjae Kim1, Wan Sik Hwang1 (1. Korea Aerospace Univ. (Korea))

[Tu-P2-H-05]Tunneling transport via deep levels in p-type diamond Schottky barrier diodes

〇Makoto Kawano1, Yoshitaka Taniyasu1, Kazuyuki Hirama1 (1. NTTBRL (Japan))

[Tu-P2-H-06]Development of an Atomic Layer Etching for Diamond Nanophotonics

Marine Régnier1,2,3, Amadeusz Dydnianski3,4, Jungwon Kim1, Aboulaye Traore7, 〇Jacek Kasprzak1,3,4, Sébastian Pairis1, Tokuyuki Teraji6, Etienne Gheereart1,2,3, Mareline Bonvalot2,3,5 (1. Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, (France), 2. University of Tsukuba (Japan), 3. Japanese-French Laboratory for Semiconductor Physics and Technology J-FAST, CNRS, Univ. Grenoble Alpes, University of Tsukuba, Japan (Japan), 4. University of Warsaw (Poland), 5. Université Grenoble Alpes, CNRS, Grenoble INP, LTM (France), 6. NIMS (Japan), 7. LSPM, CNRS, Université Sorbonne Paris Nord, (France))