[Tu-P2-H] SiC, IGZO, Ga2O3, and diamond

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[Tu-P2-H-02] High-Performance 3D-Stacked IGZO Vertical-Channel TFTs with Sub-60 nm Scaling and Enhanced Electrostatic Control for BEOL Memory Applications

〇YoungJae - Kim¹ (1. Kyung Hee University (Korea))

We demonstrated 3D-stacked IGZO vertical TFTs with a channel-last process for higher-density memory devices, achieving sub-60 nm scaling and high current drivability (74.6 μA/μm). High-k dielectrics integration effectively suppressed short-channel effects, enabling scalable 3D DRAM and BEOL-compatible device applications.